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CAC940K010
VCSEL ChipCAC940K010

940nm VCSEL Array 

Part number: CAC940K010

Product Description Features

  • • Customized 940nm Vertical-Cavity Surface-Emitting Laser

  • • Very low wavelength-temperature sensitivity

  • • Chip on submount or heatsink is available upon request

  • • Other wavelengths, chip dimensions, and emitter patterns are available uponrequest

Typical Applications

  • • Time of flight (ToF) 3D sensing.

Electro-Optical Characteristics under long pulse width

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

400

460

W

Pulse 125mA, 50℃

Threshold Current

Ith

45

70

A

Pulse 50℃

Operating Current

Iop

125

A

Pulse 50℃

Differential resistance

Rs

3

8

Ω

Pulse 125mA, 50℃

Operating Voltage

Vop

6.8

7.4

8.0

V

Pulse 125mA, 50℃

Slo pe Efficiency

ηs

4.5

W/A

Pulse 125mA, 50℃

Power Conversion Efficiency

PCE

42

50

%

Pulse 125mA, 50℃

Wavelength

λpeak

930

940

950

nm

Pulse 125mA, 50℃

Spectral Width (RMS)

Δλ

1

2.5

nm

Pulse 125mA, 50℃

Beam Full Divergence (D86)

ϕ

20

26

32

°

Pulse 125mA, 50℃

Wavelength coefficient

dλ/dT

0.07

nm/°C

Pulse 125mA

* All tests are under pulse condition on 1000Hz, 10%D.C. with heatsink temperature 50℃.

Electro-Optical Characteristics under short pulse width

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

POP

25

30

W

Pulse 8ns, 20KHz,6.5A, RT

Threshold Current

Ith

45

70

A

Pulse 8ns, 20KHz,RT

Operating Current

Iop

6.5

A

Pulse 8ns, 20KHz, RT

Differential resistance

Rs

3

8

Ω

Pulse 8ns, 20KHz,6.5A, RT

Operating Voltage

Vop

30

35

V

Pulse 8ns, 20KHz,6.5A, RT

Slo pe Efficiency

ηs

4

4.7

W/A

Pulse 8ns, 20KHz,6.5A, RT

Power Conversion Efficiency

PCE

12

17

%

Pulse 8ns, 20KHz,6.5A, RT

Wavelength

λpeak

930

940

950

nm

Pulse 8ns, 20KHz,6.5A, RT

Spectral Width (RMS)

Δλ

1

2.5

nm

Pulse 8ns, 20KHz,6.5A, RT

Beam Full Divergence (D86)

ϕ

20

28

33

°

Pulse 8ns, 20KHz,6.5A, RT

Wavelength coefficient

dλ/dT

0.07

nm/°C

Pulse

* All tests are under pulse condition on 20KHz, 8ns pulse width. with room temperature, unless otherwise specified. The voltage value in table is recorded by driver.

Typical Performance Curves at 50°C

1.jpg

Typical Performance Curves at room temperature under short pulse

1.jpg

* All tests are under pulse condition on 20KHz, 8ns pulse width. with room temperature, unless otherwise specified. The voltage value in table is recorded by driver.

Mechanical Characteristics

ParameterRatingsUnits
Number of emitters7#
Emitter pitch                (x)45µm
Emitter pitch                (y)38.9µm
Chip Width225±15(Front);235±20(Rear)µm
Chip Length375±15(Front);385±20(Rear)µm
Chip Height100±10µm
Anode ContactEmission side, Au surface/
Anode bonding pad140*100µm x µm
Cathode ContactBackside, Au surface/

Absolute Maximum Ratings

ParameterConditionsUnits
Operating Temperature-20 to 85°C
Storage Temperature-40 to 105°C

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips.

Shipping Instruction

The unmounted chips are shipped on adhesive blue tape rings or Gel-Pak boxes.

Note: No responsibility is assumed for the use of these products. The products canemit Class IV radiation and must be operated with extreme care. Avoid directly viewingthe laser beam or exposure to specular reflections. Proper eye-wear must be worn at all times when operating. VCSEL Chips are electrostatic-sensitive device and proper ESD protection is required for handling.

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