Products
Products
CAC940G001
VCSEL ChipCAC940G001

940nm VCSEL Array

Part number: CAC940G001

Product Description &Features

  • • 940nm Vertical-Cavity Surface-Emitting Laser array with output power of 2W and2.35W

  • • Very low wavelength-temperature sensitivity

  • • Chip on submount or heatsink is available upon request

  • • Other wavelengths, chip dimensions, and emitter patterns are available uponrequest

Typical Applications

  • • Time of Flight (TOF) for 3D sensing such as gesture recognition, depth imaging, automotive sensing, etc.

  • • IR illumination

Chip dimension layout

image.png

Electro-Optical Characteristics (2.35W Output Power)

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

Pop

2.00

2.35

W

Pulse 2.8A 50℃

Threshold Current

Lth

0.5

A

Pulse 50℃

Operating Current

Lop

2.8

A

Pulse 50℃

Differential resistance

Rs

180

400

Pulse 2.8A 50℃

Operating Voltage

Vop

1.6

2.1

2.4

V

Pulse 2.8A 50℃

Slope Efficiency

ηs

1

W/A

Pulse 2.8A 50℃

Power Conversion Efficiency

PCE

35

40

%

Pulse 2.8A 50℃

Wavelength

λpeak

934

940

946

nm

Pulse 2.8A 50℃

Spectral Width (RMS)

Δλ

2.5

nm

Pulse 2.8A 50℃

Beam Full Divergence (D86)

ϕ

18

21

24

°

Pulse 2.8A 50℃
Wavelength coefficient

dλ/dT

0.07

nm/°C

Pulse
Electro-Optical Characteristics (2W Output Power)

Parameters

Symbol

Min

Typical

Max

Units

Test Condition

Optical Output Power

Pop

1.8

2.0

W

Pulse 2.5A50℃

Threshold Current

Lth

0.5

A

Pulse 50℃

Operating Current

Lop

2.5

A

Pulse 50℃

Differential resistance

Rs

180

400

Pulse 2.5A50℃

Operating Voltage

Vop

1.5

2.0

2.3

V

Pulse 2.5A50℃

Slope Efficiency

ηs

1

W/A

Pulse 2.5A50℃

Power Conversion Efficiency

PCE

35

40

%

Pulse 2.5A50℃

Wavelength

λpeak

934

940

946

nm

Pulse 2.5A50℃

Spectral Width (RMS)

Δλ

2.5

nm

Pulse 2.5A50℃

Beam Full Divergence (D86)

ϕ

18

21

24

°

Pulse 2.5A50℃
Wavelength coefficient

dλ/dT

0.07

nm/°C

Pulse
*All tests are under pulse condition 100Hz, 5%D.C. with heatsink temperature 50℃. Mass production wafer level test condition could vary slightly. Operating current range is for reference at engineering stage in case the typical value is not ideal for module application. Within such a current range, an acceptable PCE can be maintained, though most parameters are subjected to change if operating current is different from the suggested typical value.

Typical Performance Curves at 50°C

image.png

image.png

Mechanical Characteristics

ParameterRatingsUnits
Number of emitters361#
Emitter pitch(x)52µm
Emitter pitch(y)30.5µm
Chip Width792±15µm
Chip Length680±15µm
Chip Height100±10µm
Anode ContactEmission side, Ausurface/
Anode bonding108 X610, 108 X500µm x µm
Cathode ContactBackside, Au surface/

Absolute Maximum Ratings

ParameterConditionsUnits
Operating Temperature-20 to 85°C
Storage Temperature-40 to 105°C

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips

Shipping Instruction

The modules are shipped in tape & reeling packaging or Gel-boxes.


Note: No responsibility is assumed for the use of these products. The products canemit Class IV radiation and must be operated with extreme care. Avoid directly viewing the laser beam or exposure to specular reflections. Proper eyewear must be worn at all times when operating. VCSEL Chip in the modules are electrostatic-sensitive device and proper ESD protection is required forhandling.


1545213529567234.jpg