CAC940G001

Product Description &Features

• 940nm Vertical-Cavity Surface-Emitting Laser array with output power of 2W and2.35W
• Very low wavelength-temperature sensitivity
• Chip on submount or heatsink is available upon request
• Other wavelengths, chip dimensions, and emitter patterns are available uponrequest

Typical Applications

• Time of Flight (TOF) for 3D sensing such as gesture recognition, depth imaging, automotive sensing, etc.
• IR illumination

Chip dimension layout

Electro-Optical Characteristics (2.35W Output Power)

Parameters	Symbol	Min	Typical	Max	Units	Test Condition
Optical Output Power	Pop	2.00	2.35	–	W	Pulse 2.8A 50℃
Threshold Current	Lth	–	0.5	–	A	Pulse 50℃
Operating Current	Lop	–	2.8	–	A	Pulse 50℃
Differential resistance	Rs	–	180	400	mΩ	Pulse 2.8A 50℃
Operating Voltage	Vop	1.6	2.1	2.4	V	Pulse 2.8A 50℃
Slope Efficiency	ηs	–	1	–	W/A	Pulse 2.8A 50℃
Power Conversion Efficiency	PCE	35	40	–	%	Pulse 2.8A 50℃
Wavelength	λpeak	934	940	946	nm	Pulse 2.8A 50℃
Spectral Width (RMS)	Δλ	–	–	2.5	nm	Pulse 2.8A 50℃
Beam Full Divergence (D86)	ϕ	18	21	24	°	Pulse 2.8A 50℃
Wavelength coefficient	dλ/dT	–	0.07	–	nm/°C	Pulse

Electro-Optical Characteristics (2W Output Power)

Parameters	Symbol	Min	Typical	Max	Units	Test Condition
Optical Output Power	Pop	1.8	2.0	–	W	Pulse 2.5A50℃
Threshold Current	Lth	–	0.5	–	A	Pulse 50℃
Operating Current	Lop	–	2.5	–	A	Pulse 50℃
Differential resistance	Rs	–	180	400	mΩ	Pulse 2.5A50℃
Operating Voltage	Vop	1.5	2.0	2.3	V	Pulse 2.5A50℃
Slope Efficiency	ηs	–	1	–	W/A	Pulse 2.5A50℃
Power Conversion Efficiency	PCE	35	40	–	%	Pulse 2.5A50℃
Wavelength	λpeak	934	940	946	nm	Pulse 2.5A50℃
Spectral Width (RMS)	Δλ	–	–	2.5	nm	Pulse 2.5A50℃
Beam Full Divergence (D86)	ϕ	18	21	24	°	Pulse 2.5A50℃
Wavelength coefficient	dλ/dT	–	0.07	–	nm/°C	Pulse

*All tests are under pulse condition 100Hz, 5%D.C. with heatsink temperature 50℃. Mass production wafer level test condition could vary slightly. Operating current range is for reference at engineering stage in case the typical value is not ideal for module application. Within such a current range, an acceptable PCE can be maintained, though most parameters are subjected to change if operating current is different from the suggested typical value.

Typical Performance Curves at 50°C

Mechanical Characteristics

Parameter	Ratings	Units
Number of emitters	361	#
Emitter pitch(x)	52	µm
Emitter pitch(y)	30.5	µm
Chip Width	792±15	µm
Chip Length	680±15	µm
Chip Height	100±10	µm
Anode Contact	Emission side, Ausurface	/
Anode bonding	108 X610, 108 X500	µm x µm
Cathode Contact	Backside, Au surface	/

Absolute Maximum Ratings

Parameter	Conditions	Units
Operating Temperature	-20 to 85	°C
Storage Temperature	-40 to 105	°C

Stresses beyond the parameters listed under Absolute Maxim Ratings may cause permanent damage to the chips

Shipping Instruction

The modules are shipped in tape & reeling packaging or Gel-boxes.

Note: No responsibility is assumed for the use of these products. The products canemit Class IV radiation and must be operated with extreme care. Avoid directly viewing the laser beam or exposure to specular reflections. Proper eyewear must be worn at all times when operating. VCSEL Chip in the modules are electrostatic-sensitive device and proper ESD protection is required forhandling.